GUNN DIODES

A Gunn diode is made from a compound known as gallium arsenide (GaAs). When a voltage is applied to this device, it oscillates because of the Gunn effect, named after J. Gunn of International Business Machines (IBM), who first observed the phenomenon in the 1960s. Oscillation occurs as a result of a property called negative resistance. This is a misnomer because, as we have learned, there is no such thing as a device that conducts better than perfectly. In this sense, negative resistance refers to the fact that over a certain limited portion of the characteristic curve, the current through a Gunn diode decreases as the voltage increases, contrary to what normally takes place in electrical systems.

مواضيع ذات صلة

الحجم النووي Nuclean Size

ربوتات النانو (Nanorobots)

تلسكوبات الأشعة تحت الحمراء والسينية

المقاومة الداخلية المرتفعة لبطارية ليثيوم-ايون

أهمية تقنية النانو (Importance of nanotechnology)

متسعات المرشح على التوالي Filter Capacitors in series

أشباه الموصلات

ظاهرة الحفز الضوئي

مكشاف أشباه الموصلات Semiconductor detector

ميكروسكوبات السليكون

تأثيرات الدفيئة وثقب طبقة الأوزون

مخطط الطاقة لوصلة ال PN